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1

The data revolution comes to higher education: identifying students at risk of dropout in Chile

Von Hippel, Paul T., Hofflinger, Alvaro

Journal:

Journal of Higher Education Policy and Management

Year:

2020

Language:

english

File:

PDF, 2.23 MB

english, 2020

2

Studies on the heat removal features of stacked SOI structures with a dedicated field solver program (SUNRED)

Zs Kohári, V Székely, M Rencz, A Páhl, V Dudek, B Höfflinger

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 1.28 MB

english, 1998

3

A new analytical charge model for the dual-gate controlled thin-film SOI MOSFET

M. Schubert, B. Höfflinger, R.P. Zingg

Journal:

Superlattices and Microstructures

Year:

1990

Language:

english

File:

PDF, 326 KB

english, 1990

4

Photodiodes in epitaxial laterally overgrown silicon for image sensors in 3D-technology

P. Vöhringer, W. Appel, G. Graf, B. Höfflinger, R. Zingg

Journal:

Sensors and Actuators A: Physical

Year:

1990

Language:

english

File:

PDF, 665 KB

english, 1990

5

Silicon direct bonding for sensor applications: Characterization of the bond quality

Christine Harendt, Bernd Hofflinger, Heinz-Gerd Graf, Elisabeth Penteker

Journal:

Sensors and Actuators A: Physical

Year:

1990

Language:

english

File:

PDF, 1.29 MB

english, 1990

6

Wafer bonding: Investigation and in situ observation of the bond process

Christine Harendt, Heinz-Gerd Graf, Elisabeth Penteker, Bernd Höfflinger

Journal:

Sensors and Actuators A: Physical

Year:

1990

Language:

english

File:

PDF, 966 KB

english, 1990

7

Silicon on insulator material by Wafer Bonding

Christine Harendt, Charles E. Hunt, Wolfgang Appel, Heinz-Gerd Graf, Bernd Höfflinger, Elisabeth Penteker

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 3.81 MB

english, 1991

8

[The Frontiers Collection] CHIPS 2020 VOL. 2 || Monolithic 3D Integration

Höfflinger, Bernd

Year:

2016

Language:

english

File:

PDF, 3.69 MB

english, 2016

9

[The Frontiers Collection] CHIPS 2020 VOL. 2 ||

Höfflinger, Bernd

Year:

2016

Language:

english

File:

PDF, 17.10 MB

english, 2016

10

[The Frontiers Collection] CHIPS 2020 VOL. 2 || ITRS 2028—International Roadmap of Semiconductors

Höfflinger, Bernd

Year:

2016

Language:

english

File:

PDF, 196 KB

english, 2016

11

Quellen und Studien zur Verfassungsgeschichte des Deutschen Reiches in Mittelalter und Neuzeit. Bd. II. Die goldene Bulle Kaiser Karls IV. Heft I. Entstehung und Bedeutung der goldenen Bulle. Heft II. Text der goldenen Bulle und Urkunden zu ihrer Geschichte und Erläuterungby Karl Zeumer

Review by: Heinrich W. Höfflinger

Journal:

Vierteljahrschrift für Sozial- und Wirtschaftsgeschichte

Year:

1908

Language:

german

File:

PDF, 325 KB

german, 1908

12

[IEEE 2016 International Conference on Indoor Positioning and Indoor Navigation (IPIN) - Alcala de Henares, Spain (2016.10.4-2016.10.7)] 2016 International Conference on Indoor Positioning and Indoor Navigation (IPIN) - Exploiting ground reflection for robust 3D smartphone localization

Bordoy, Joan, Wendeberg, Johannes, Schindelhauer, Christian, Hofflinger, Fabian, Reindl, Leonhard M.

Year:

2016

Language:

english

File:

PDF, 255 KB

english, 2016

13

Missing children: how Chilean schools evaded accountability by having low-performing students miss high-stakes tests

Hofflinger, Alvaro, von Hippel, Paul T.

Journal:

Educational Assessment, Evaluation and Accountability

Year:

2020

File:

PDF, 1.03 MB

2020

14

Silicon MOSFETs on insulator with lithography-independent 100 nm channel length

V. Dudek, W. Appel, L. Beer, G. Digele, B. Höfflinger, H. Schneider

Journal:

Microelectronics Journal

Year:

1996

Language:

english

File:

PDF, 576 KB

english, 1996

15

Kleinsignaltheorie von lawinenlaufzeitdioden mit multiplikationsrückkopplung

Journal:

Solid State Communications

Year:

1966

Language:

german

File:

PDF, 261 KB

german, 1966

16

Ein vorschlag zur verstärkung von plasmawellen in festkörpern mit massenanisotropie

Journal:

Solid-State Electronics

Year:

1965

File:

PDF, 371 KB

1965

17

An analytical model for strongly inverted and accumulated silicon films

M. Schubert, B. Höfflinger, R.P. Zingg

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.31 MB

english, 1990

18

1D modeling of SOI MOSFETs using distinct quasi-fermi potentials

M. Schubert, B. Höfflinger, D. Schroeder, R.P. Zingg

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 199 KB

english, 1991

19

A smart power process in “direct-bonded” silicon on insulator with 150 V VDMOS, CMOS and bipolar transistors

T. Ifström, U. Apel, H.-G. Graf, C. Harendt, B. Höfflinger

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 401 KB

english, 1992

20

Realisation of irregular quarter-micron patterns in thick resists using an advanced e-beam sensitive TSI process

M. Irmscher, B. Höfflinger, R. Springer

Journal:

Microelectronic Engineering

Year:

1996

Language:

english

File:

PDF, 1.11 MB

english, 1996

21

Parallel digital neural hardware for controller design

S. Neusser, B. Höfflinger

Journal:

Mathematics and Computers in Simulation

Year:

1996

Language:

english

File:

PDF, 725 KB

english, 1996

22

Static and dynamic behaviour of power devices in silicon-direct-bonded substrates

U. Apel, H.-G. Graf, C. Harendt, B. Höfflinger

Journal:

Materials Science and Engineering: B

Year:

1995

Language:

english

File:

PDF, 428 KB

english, 1995

23

Economic production of submicron ASICs with laser beam direct write lithography

C. Schomburg, B. Höfflinger, R. Springer, R. Wijnaendts-van-Resandt

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 299 KB

english, 1997

24

SOI wafer flow process for stencil mask fabrication

J. Butschke, A. Ehrmann, B. Höfflinger, M. Irmscher, R. Käsmaier, F. Letzkus, H. Löschner, J. Mathuni, C. Reuter, C. Schomburg, R. Springer

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 1.56 MB

english, 1999

25

MOS transistors with epitaxial Si, laterally grown over SiO2by liquid phase epitaxy

R. Bergmann, E. Czech, I. Silier, N. Nagel, E. Bauser, H. J. Queisser, R. P. Zingg, B. Höfflinger

Journal:

Applied Physics A: Materials Science & Processing

Year:

1992

Language:

english

File:

PDF, 557 KB

english, 1992

26

Kann die Mikroelektronik nach 2010 noch wachsen?

Journal:

e & i Elektrotechnik und Informationstechnik

Year:

2001

File:

PDF, 1.07 MB

2001

27

Dry etch improvements in the SOI wafer flow process for IPL stencil mask fabrication

F. Letzkus, J. Butschke, B. Höfflinger, M. Irmscher, C. Reuter, R. Springer, A. Ehrmann, J. Mathuni

Journal:

Microelectronic Engineering

Year:

2000

Language:

english

File:

PDF, 1.85 MB

english, 2000

28

Lithography-independent nanometer silicon MOSFETs on insulator

Dudek, V., Appel, W., Beer, L., Digele, G., Hofflinger, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.20 MB

english, 1996

29

A 100-V lateral DMOS transistor with a 0.3-micrometer channel in a 1-micrometer silicon-film-on-insulator-on-silicon

Apel, U., Graf, H.G., Harendt, C., Hofflinger, B., Ifstrom, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 480 KB

english, 1991

30

Cooperative research on application-specific microelectronics

Journal:

Proceedings of the IEEE

Year:

1989

Language:

english

File:

PDF, 243 KB

english, 1989

31

Silicon fusion bonding and its characterization

Harendt, C, Graf, H G, Hofflinger, B, Penteker, E

Journal:

Journal of Micromechanics and Microengineering

Year:

1992

Language:

english

File:

PDF, 294 KB

english, 1992

32

[IEEE Comput. Soc. Press [1990] Digest of Papers. Fault-Tolerant Computing: 20th International Symposium - Newcastle Upon Tyne, UK (26-28 June 1990)] [1990] Digest of Papers. Fault-Tolerant Computing: 20th International Symposium - Limits to the fault-tolerance of a feedforward neural network with learning

Nijhuis, J., Hofflinger, B., van Schaik, A., Spaanenburg, L.

Year:

1990

File:

PDF, 641 KB

1990

33

[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - Stacked CMOS inverter with symmetric device performance

Zingg, R.P., Hofflinger, B., Neudeck, G.W.

Year:

1989

Language:

english

File:

PDF, 236 KB

english, 1989

34

[IEEE 1991 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan (22-24 May 1991)] 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers - High-density ASICs with a three-dimensional CMOS process

Roos, G., Hofflinger, B., Schubert, M., Zingg, R.

Year:

1991

Language:

english

File:

PDF, 419 KB

english, 1991

35

First MOS transistors on insulator by silicon saturated liquid solution epitaxy

Zingg, R.P., Nagel, N., Bergmann, R., Bauser, E., Hofflinger, B., Queisser, H.J.

Journal:

IEEE Electron Device Letters

Year:

1992

Language:

english

File:

PDF, 385 KB

english, 1992

36

[IEEE IEEE 1995 Custom Integrated Circuits Conference - Santa Clara, CA, USA (1-4 May 1995)] Proceedings of the IEEE 1995 Custom Integrated Circuits Conference - Design considerations for high-performance low-power silicon-on-insulator gate arrays

Dudek, V., Keck, D.O., Mayer, G., Hofflinger, B.

Year:

1995

Language:

english

File:

PDF, 427 KB

english, 1995

37

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1995)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - A SOI epitaxial-channel Si-MOSFET with velocity overshoot

Beer, L., Appel, W., Dudek, V., Hofflinger, B.

Year:

1995

Language:

english

File:

PDF, 288 KB

english, 1995

38

Three-dimensional stacked MOS transistors by localized silicon epitaxial overgrowth

Zingg, R.P., Friedrich, J.A., Neudeck, G.W., Hofflinger, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.08 MB

english, 1990

39

[IEEE 41st IEEE Vehicular Technology Conference - St. Louis, MO, USA (19-22 May 1991)] [1991 Proceedings] 41st IEEE Vehicular Technology Conference - WSP-a processor for real-time wheel slip measurement in vehicles

Buchner, T., Hofflinger, B., Schwederski, T., Maretzke, J.

Year:

1991

Language:

english

File:

PDF, 609 KB

english, 1991

40

High-quality stacked CMOS inverter

Zingg, R.P., Hofflinger, B., Neudeck, G.W.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 308 KB

english, 1990

41

[IEEE Comput. Soc. Press 1997 IEEE Multi-Chip Module Conference - Santa Cruz, CA, USA (4-5 Feb. 1997)] Proceedings 1997 IEEE Multi-Chip Module Conference - Comparative cost analysis for smart-substrate MCM system

Werkmann, H., Hofflinger, B.

Year:

1997

Language:

english

File:

PDF, 705 KB

english, 1997

42

[IEEE ICMTS 92 1992 International Conference on Microelectronic Test Structures - San Diego, CA, USA (16-19 March 1992)] ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures - A new method and test structure for easy determination of femto-farad on-chip capacitances in a MOS process

Laquai, B., Richter, H., Hofflinger, B.

Year:

1992

Language:

english

File:

PDF, 490 KB

english, 1992

43

[IEEE Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334) - Portland, OR, USA (7-10 Sept. 1997)] Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334) - Boundary scan adaption for active substrate MCM-test

Werkmann, H., Hofflinger, B., Laquai, B.

Year:

1997

Language:

english

File:

PDF, 550 KB

english, 1997

44

A one-dimensional analytical model for the dual-gate-controlled thin-film SOI MOSFET

Schubert, M., Hofflinger, B., Zingg, R.P.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 335 KB

english, 1991

45

Oscillation in p+-n-n+avalanche diodes at intermediate frequencies

Journal:

Proceedings of the IEEE

Year:

1967

Language:

english

File:

PDF, 205 KB

english, 1967

46

A 150-V multiple up-drain VDMOS, CMOS, and bipolar process in 'direct-bonded' silicon on insulator on silicon

Ifstrom, T., Apel, U., Graf, H.-G., Harendt, C., Hofflinger, B.

Journal:

IEEE Electron Device Letters

Year:

1992

Language:

english

File:

PDF, 185 KB

english, 1992

47

[IEEE Proceedings. SOS/SOI Technology Workshop - St. Simons Island, GA, USA (3-5 Oct. 1988)] Proceedings. SOS/SOI Technology Workshop - Thinning techniques for 1 mu m ELO-SOI

Zingg, R.P., Graf, H.G., Appel, W., Vohringer, P., Hofflinger, B.

Year:

1988

Language:

english

File:

PDF, 136 KB

english, 1988

48

[IEEE 6th european solid state circuits conference - Grenoble, France (1980.9.22-1980.9.25)] ESSCIRC 80: 6th European Solid State Circuits Conference - A 300 Volt CMOS Coplanar Power Switch

Habekotte, E., Hofflinger, B., Renker, W., Zimmer, G.

Year:

1980

Language:

english

File:

PDF, 847 KB

english, 1980

49

[IEEE IEEE SOS/SOI Technology Conference - Stateline, NV, USA (3-5 Oct. 1989)] IEEE SOS/SOI Technology Conference - Dual-gate SOI CMOS technology by local overgrowth (LOG)

Zingg, R.P., Hofflinger, B., Neudeck, G.W.

Year:

1989

Language:

english

File:

PDF, 231 KB

english, 1989

50

[IEEE Comput. Soc EURO ASIC `90 - Paris, France (29 May-1 June 1990)] [Proceedings] EURO ASIC `90 - Domain-specific analog/digital integrated circuits in the gate-forest environment

Habekotte, E., Winkler, M., Apel, U., Grube, R., Salten, E., Spaanenburg, L., Hofflinger, B.

Year:

1990

Language:

english

File:

PDF, 453 KB

english, 1990

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